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RF2163
0
Typical Applications * 2.5GHz ISM Band Applications * PCS Communication Systems * Wireless LAN Systems Product Description
The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.
0.10 C B
-B-
3V, 2.5GHz LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product * Commercial and Consumer Systems * Portable Battery Powered Equipment * Broadband Spread-Spectrum Systems
4.00
0.10 C B
2 PLCS
3.75
2 PLCS
2.00 0.80
TYP
2 A
1.60
2 PLCS
3.75 0.75 0.50
INDEX AREA
1.50
SQ.
4.00
0.10 C A
2 PLCS
0.45 0.28 3.20
2 PLCS
2.00
0.10 C A
2 PLCS
0.10 M C A B
12 MAX 0.05 0.00
1.00 0.90 Dimensions in mm.
C
0.05
Shaded pin is lead 1.
0.75 0.65
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: QFN, 16-Pin, 4x4
Features * Single 3.3V Power Supply * +30dBm Saturated Output Power
VCC1
VCC1
GND
VCC
NC
* 19dB Small Signal Gain * High Power Added Efficiency
RF OUT RF OUT RF OUT
1 RF IN BIAS GND2 PWR SEN 2 3 4 5 PWR REF
16
15
14
13 12 11
* Patent Pending Power Sense Technology * 1800MHz to 2500MHz Frequency Range
Bias
10 8 BIAS GND 1 9 GND
6 VREG1
7 VREG2
Ordering Information
RF2163 RF2163 PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A6 060301
2-237
RF2163
Absolute Maximum Ratings Parameter
Supply Voltage Power Control Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity
Rating
-0.5 to +6.0 -0.5 to 3.3 1000 +15 -40 to +85 -40 to +150 JEDEC Level 3
Unit
VDC V mA dBm C C
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range Maximum Saturated Output Power Efficiency at Max Output Power Maximum Linear Output Power Linear Efficiency Small Signal Gain Reverse Isolation Second Harmonic Adjacent Channel Power Alternate Channel Power Isolation Input Impedance Input VSWR
Specification Min. Typ. Max.
1800 to 2500 +30 26 25 25 19 30 30 -35 -35 -52 TBD 50 2:1 2.3 0 0.5 -32 -50
Unit
Condition
T=25 C, VCC =3.5V, VREG1 =VREG2 =2.3V, Freq=2450MHz
+29
+32
MHz dBm % dBm % dB dB dB dBc dBc dBc dBm
PIN =+13dBm
With 802.11 modulation (11Mbit/s) and meeting 802.11 spectral mask. PIN =10dBm In "ON" state In "OFF" state Including second harmonic trap, see application circuit POUT =24dBm POUT =24dBm In "OFF" state, PIN =TBD With external matching With external matching Voltage supplied to control input; device is "ON" Voltage supplied to control input; device is "OFF"
16
Power Down
VREG "ON" VREG "OFF" V V
Power Supply
Operating Voltage Current Consumption 3.0 to 5.0 650 350 150 V mA mA mA Power Down "ON", at max output power Power Down "ON", POUT =25dBm Idle current
290
2-238
Rev A6 060301
RF2163
Pin 1 2 Function GND RF IN Description
Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input. This input is AC coupled, so an external blocking capacitor is not required if this pin is connected to a DC path.
Interface Schematic
VCC1
Bond Wire Inductance RF IN BIAS
3 4
BIAS GND2 PWR SEN
Ground for second stage bias circuit. For best performance, keep traces physically short and connect immediately to ground plane. The PWR SEN and PWR REF pins can be used in conjunction with an external feedback path to provide an RF power control function for the RF2163. The power control function is based on sampling the RF drive to the final stage of the RF2163.
See pin 16.
RF OUT
PWR SEN
PWR REF BIAS
5 6 7 8 9 10
PWR REF VREG1 VREG2 BIAS GND1 GND RF OUT
Same as pin 4. This pin requires a regulated supply to maintain the correct bias current. Same as pin 6. Ground for first stage bias circuit. For best performance connect to ground with a 10nH inductor. Same as pin 1.
See pin 4. See pin 16. See pin 16. See pin 16.
11 12 13 14
RF OUT RF OUT NC VCC1
RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wave length microstrip line that is RF grounded at the BIAS other end, or through an RF inductor that supports the required DC currents. Same as pin 10. See pin 10. Same as pin 10. Not connected. Interstage match and bias for first stage output. Connect interstage matching capacitor to t pin with a short trace. Connect low-frequency bypass capacitors to this pin with a long trace. See evaluation board layout for details. Same as pin 14. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby.
VREG1 VREG2
RF OUT
See pin 10.
See pin 2.
15 16
VCC1 VCC
See pin 2.
VCC
BIAS
BIAS GND1
BIAS GND2
Pkg Base
GND
Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required.
See pin 1 and 2.
Rev A6 060301
2-239
RF2163
Application Schematic 2400MHz to 2483MHz
VCC 10 uF
Part is Backside Grounded.
1000 pF 1000 pF 1000 pF 6.2 pF 10 pF
1 1.5 pF RF IN 1.5 nH 3 4 5 390 1000 pF 2
16
15
14
13 12 3.0 pF 11 TL1 3.0 pF 10
15 nH
10 pF RF OUT TL2 1.5 pF
Bias
6
7
8
9 VREG1 = 2.4 V VREG2 = 2.4 V VCC = 3.5 V
10 nH 390 1000 pF 1000 pF 10 uF 10 uF WLAN 25 mil 1000 pF 1000 pF Transmission Line Length TL1
TL2
PWR SEN PWR REF
175 mil
VREG1
VREG2
2-240
Rev A6 060301
RF2163
Evaluation Board Schematic 2400MHz to 2483MHz
P2-4
Part is Backside Grounded.
C4 1000 pF
C12 1000 pF C11 6.2 pF C5 3.0 pF L1 15 nH
C22 10 uF C10 1000 pF C9 10 pF
J1 RF IN
50 strip
C1 1.5 pF L3 1.5 nH
1 2 3 4 5
16
15
14
13 12 11
C8 10 pF TL1 TL2 C7 1.5 pF
50 strip
J2 RF OUT
Bias
10 8 9 C6 3.0 pF L2 10 nH
6
7
C2 1000 pF
R2 390 R1 390
2163400-
VREG1 = 2.3 V VREG2 = 2.3 V VCC = 3.5 V
C15 1000 pF
C3 1000 pF C21 10 uF
C13 1000 pF C20 10 uF
P1 P1-1 1 2 P1-3 3 PS REF GND PWR SENSE P2-4 P2-1 P2-2
P2 1 2 3 4 VREG2 VREG1 GND VCC
P1-3 P1-1
C16 1000 pF
P2-2
P2-1
Transmission Line Length WLAN
TL1 25 mil
TL2 175 mil
Rev A6 060301
2-241
RF2163
Evaluation Board Layout Board Size 2.0" x 2.0"
Board Thickness 0.028", Board Material FR-4
2-242
Rev A6 060301
RF2163
Theory of Operation and Application Information
The RF2163 is a two-stage device with a nominal gain of 19dB in the 2.4GHz to 2.5GHz ISM band. The RF2163 is designed primarily for IEEE802.11B WLAN applications where the available supply voltage and current are not limited. It will meet 802.11B spectral mask requirements at an output power of +24dBm. It is especially appropriate for WLAN access points and other base-station type equipment. The RF2163 requires only a single positive supply of 3.3V nominal (or greater) to operate to full specifications. Power control is provided through two bias control input pins (VREG1 and VREG2), but in most applications these are tied together and used as a single control input. There is some external matching on the input and output of the part, thus allowing the part to be used in other applications outside the 2.4GHz to 2.5GHz ISM band (such as MMDS). Both the input and the output of the device need a series DC-blocking capacitor. In some cases, a capacitor used as a matching component can also serve as the blocking cap. The circuit used on the evaluation board is optimized for 3.5V nominal applications. For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground layout and ground vias. Other configurations may also work, but the design process is much easier and quicker if the layout is copied from the RF2163 evaluation board. Gerber files of our designs can be provided upon request. The RF2163 is not a difficult part to implement, but care in circuit layout and component selection is always advisable when designing circuits to operate at 2.5GHz. The most critical passive components in the circuit are the input, interstage and output matching components (C1, C5, C6, C7, and C11). In these cases, high-Q capacitors suitable for RF applications are used on our evaluation board (a BOM is available on request). High-Q parts are not required in every design, but it is very strongly recommended that the original design be implemented with the same or similar parts used on our evaluation board. Then, less costly components can be substituted in their place, making it easy to test the impact of cheaper components on performance. General RFMD experience has indicated that the slightly higher cost of better quality passive components is more than offset by the significant improvements in production yields in large-volume manufacturing. The interstage matching capacitor, C11, along with the combined inductance of the internal bond wire, the short length of circuit board trace, and the parasitic inductance of this capacitor, tunes the peak of the small-signal gain response. The trace length between C11 and pins 14 and 15 should be kept as short as possible. In practice, VCC1, VCC, and the supply for the output stage bias will be tied to this supply line. This can be accomplished using a suitably-long transmission line which is RF shorted on the other end. Ideally the length of this line will be a quarter wavelength, but it only needs to be long enough so that the effects of other supply bypass capacitors on the interstage match are minimized. If board space is a concern, this isolation can also be accomplished with an RF choke inductor or ferrite bead. Additionally, a higher-value capacitor than shown on the application schematic can be used if bypass capacitors must be closer. A Smith Chart can be used to provide initial guidance for value selection and parts placement. Be aware of the self-resonant frequency (SRF) of higher-valued capacitors. The SRF must be above the frequency of operation. The output matching caps are C5, C6, and C7. These are tuned along with the 50 transmission line segments TL1 and TL2, as shown on the evaluation board schematic. These segments should be duplicated as closely as possible. Due to variations in FR-4 characteristics and PCB manufacturer process variations, some benefit will be obtained from small adjustments to these transmission line lengths when the evaluation board layout is duplicated on another design. Prior to full rate manufacturing, the board layout of early prototypes should include some additional exposed ground areas around C5, C6, and C7 to optimize this part of the circuit. In order to reduce component count, the output can also be tuned with a single capacitor. A Smith Chart can help determine the desired value and transmission line length, which can be similarly adjusted on the board prior to production. This will result in a slightly lower-bandwidth and more sensitive match, but in most applications the bandwidth is still sufficient.
Rev A6 060301
2-243
RF2163
Power sensing is implemented with the PWR SEN and PWR REF lines. The outputs of these pins are transistor collectors and need to be pulled up to the supply through a resistor. PWR REF provides an output current proportional to the output stage bias current, and PWR SEN provides an output current proportional to the total (RF and bias) current of the output stage. The pulllup resistors convert these currents to voltages, and the voltage difference between these two pins is proportional to the RF current. See the graph, "VREF -VSENSE versus POUT", for the response of this signal. This difference signal can be fed to a power control circuit elsewhere in the end product, or it can be processed at the PA with additional circuitry and used to adjust the VREG voltage(s) to implement automatic level control. Contact RFMD Sales or Applications Engineering for additional data and guidance in using this feature. The RF2163 has primarily been characterized with a voltage on VREG1 and VREG2 of 2.4VDC. However, the RF2163 will operate from a wide range of control voltages. If you prefer to use a control voltage that is significantly different than 2.4VDC, contact RFMD Sales or Applications Engineering for additional data and guidance.
2-244
Rev A6 060301
RF2163
VREF - VSENSE versus POUT
0.5 1200.0
ICC versus POUT
1000.0 0.0
Log10 (V REF-VSENSE)
800.0 -0.5
ICC (mA)
-1.0 -1.5 -2.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0
600.0
400.0
200.0
0.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0
POUT (dBm)
POUT (dBm)
Gain and Efficiency versus POUT with 802.11 Modulation
45.0 40.0 35.0
Gain, Efficiency (dB, %)
30.0 25.0 20.0 15.0 10.0 5.0 0.0 -5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 Gain (dB) Eff
POUT (dBm)
Rev A6 060301
2-245
RF2163
2-246
Rev A6 060301

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